Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

Gryczynski, K.G. and Vemuri, P.R. and Watson, Ian and Neogi, Arup (2011) Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99 (12). 12905. ISSN 0003-6951 (https://doi.org/10.1063/1.3640492)

Abstract

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

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• Item metadata

  Item type:	Article
  ID code:	33605
  Dates:	Date Event 21 September 2011 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics > Institute of Photonics Technology and Innovation Centre > Photonics
  Depositing user:	Pure Administrator
  Date deposited:	17 Oct 2011 11:37
  Last modified:	08 Apr 2024 19:24
  Related URLs:	Scopus publication
  URI:	https://strathprints.strath.ac.uk/id/eprint/33605