Determination of the Mn concentration in GaMnAs

Zhao, LX and Campion, RP and Fewster, PF and Martin, RW and Ber, BY and Kovarsky, AP and Staddon, CR and Wang, KY and Edmonds, KW and Foxon, CT and Gallagher, BL (2005) Determination of the Mn concentration in GaMnAs. Semiconductor Science and Technology, 20 (5). pp. 369-373. ISSN 0268-1242 (https://doi.org/10.1088/0268-1242/20/5/008)

Abstract

Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.

• Share and Export
  

  RDF+XMLBibTeXRIOXX2 XMLRDF+N-TriplesJSONDublin CoreAtomSimple MetadataReferMETSHTML CitationASCII CitationOpenURL ContextObjectEndNoteOpenURL ContextObject in SpanMODSMPEG-21 DIDLEP3 XMLData Cite XMLRIS (EndNote Online, Zotero, Ref manager, etc)RDF+N3Multiline CSV
• Item metadata

  Item type:	Article
  ID code:	31060
  Dates:	Date Event 1 May 2005 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics
  Depositing user:	Pure Administrator
  Date deposited:	22 Jun 2011 13:42
  Last modified:	08 Apr 2024 19:04
  URI:	https://strathprints.strath.ac.uk/id/eprint/31060