Excited states of the A free exciton in CuInS2

Yakushev, M.V. and Martin, R.W. and Mudryi, A.V. and Ivaniukovich, A.V. (2008) Excited states of the A free exciton in CuInS2. Applied Physics Letters, 92 (11). ISSN 0003-6951 (http://dx.doi.org/10.1063/1.2896301)

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Abstract

High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, EAn=2=1.5494 eV, and second, EAn=3=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFE A =18.5 meV and Bohr radius aB A=3.8 nm, bandgap Eg=1.5540 eV at 4.2 K and static dielectric constant =10.2 have been derived assuming a hydrogenic model.

  • Item type:Article
    ID code:19747
    Dates:
    Date
    Event
    17 March 2008
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Strathprints Administrator
    Date deposited:27 May 2010 18:22
    Last modified:08 Apr 2024 17:37
    URI:https://strathprints.strath.ac.uk/id/eprint/19747
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