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Etch end-point detection of GaN-based devices using optical emission spectroscopy

Kim, H.S. and Sung, Y.J. and Kim, D.W. and Kim, T. and Dawson, M.D. and Yeom, G.Y. (2001) Etch end-point detection of GaN-based devices using optical emission spectroscopy. Materials Science and Engineering B, 82 (1-3). pp. 159-162. ISSN 0921-5107

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Abstract

In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).

Item type: Article
ID code: 9995
Keywords: etch end point detection (EPD), OES, AlGaN/GaN, inductively-coupled cl-2/ar, cl-2/bcl3 plasmas, inp, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 13 Jul 2011 09:29
    Last modified: 12 Mar 2012 10:53
    URI: http://strathprints.strath.ac.uk/id/eprint/9995

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