Kim, H.S. and Sung, Y.J. and Kim, D.W. and Kim, T. and Dawson, M.D. and Yeom, G.Y. (2001) Etch end-point detection of GaN-based devices using optical emission spectroscopy. Materials Science and Engineering B, 82 (1-3). pp. 159-162. ISSN 0921-5107Full text not available in this repository. (Request a copy from the Strathclyde author)
In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).
|Keywords:||etch end point detection (EPD), OES, AlGaN/GaN, inductively-coupled cl-2/ar, cl-2/bcl3 plasmas, inp, Optics. Light, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||13 Jul 2011 08:29|
|Last modified:||29 Apr 2016 08:49|