Kim, H.S. and Sung, Y.J. and Kim, D.W. and Kim, T. and Dawson, M.D. and Yeom, G.Y. (2001) Etch end-point detection of GaN-based devices using optical emission spectroscopy. Materials Science and Engineering B, 82 (1-3). pp. 159-162. ISSN 0921-5107
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1016/S0921-5107(00)00798-4
Abstract
In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).
| Item type: | Article |
|---|---|
| ID code: | 9995 |
| Keywords: | etch end point detection (EPD), OES, AlGaN/GaN, inductively-coupled cl-2/ar, cl-2/bcl3 plasmas, inp, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 13 Jul 2011 09:29 |
| Last modified: | 12 Mar 2012 10:53 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/9995 |
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