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Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor

Yakovlev, E.V. and Talalaev, R.A. and Martin, R.W. and Peng, N. and Jeynes, C. and Deatcher, C.J. and Watson, I.M. (2006) Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor. Physica Status Solidi C, 3 (6). pp. 1620-1623. ISSN 1862-6351

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Abstract

A combined modeling and experimental analysis of InGaN deposition in the widely used single-wafer Aixtron AIX 200/4 RF-S reactor is presented. The main focus of the study is the effect of the deposition temperature on the layer composition. InGaN epilayers were grown at setpoint temperatures between 760 and 920 °C, keeping other process parameters constant. Epilayer compositions were analysed using strainindependent methods. Results from the modeling generally match the experimental compositional data well, and thus are used to analyze factors affecting indium transport and incorporation efficiency.

Item type: Article
ID code: 9980
Keywords: inGaN, MOVPE, Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Unknown Department
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 29 Nov 2011 15:12
    Last modified: 04 Oct 2012 12:34
    URI: http://strathprints.strath.ac.uk/id/eprint/9980

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