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Novel GaIn medium design for short-wavelength vertical external-cavity surface-emitting laser

Ferguson, A.I. and McGinily, S.J. and Abram, R.H. and Gardner, K.S. and Riis, E. and Roberts, J.S. (2007) Novel GaIn medium design for short-wavelength vertical external-cavity surface-emitting laser. IEEE Journal of Quantum Electronics, 43. pp. 445-450. ISSN 0018-9197

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Abstract

We report on a novel material developed as the gain medium for a vertical-external-cavity surface-emitting laser (VECSEL) operating around 850 nm. The new material departs from the conventional approach of using GaAs as the quantum-well (QW) material and expands the previously reported concept of using InAlGaAs QWs. The inclusion of indium pins dislocation propagation into the active region of the VECSEL. Crucial for the success of this design is also the development of indium and phosphorous containing quinternary strain-compensating layers. These surround the QWs and provide a more substantial resistance to defect propagation. Results are presented for stable high-power single spatial mode operation of a laser based on this material together with measurements of the unsaturated gain of the device and the characteristic temperature for the threshold power.

Item type: Article
ID code: 9922
Keywords: cavity surface-emitting laser , vertical-external-cavity surface-emitting laser , lasers, Optics. Light, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Faculty of Science > Strathclyde Institute of Pharmacy and Biomedical Sciences
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 29 Nov 2011 05:08
    Last modified: 04 Sep 2014 20:50
    URI: http://strathprints.strath.ac.uk/id/eprint/9922

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