Boyall, N.M. and Durose, K. and Watson, I.M. (2003) An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells. MRS Online Proceedings Library, 743. ISSN 0272-9172Full text not available in this repository. (Request a copy from the Strathclyde author)
The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.
|Keywords:||electron beam irradiation, cathodoluminescence, quantum wells, transmission electron microscope, microscopy, Optics. Light, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||03 Nov 2009 12:44|
|Last modified:||23 Jul 2016 00:03|