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An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells

Boyall, N.M. and Durose, K. and Watson, I.M. (2003) An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells. MRS Online Proceedings Library, 743. ISSN 0272-9172

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Abstract

The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

Item type: Article
ID code: 9083
Keywords: electron beam irradiation, cathodoluminescence, quantum wells, transmission electron microscope, microscopy, Optics. Light, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
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Depositing user: Strathprints Administrator
Date Deposited: 03 Nov 2009 12:44
Last modified: 04 Sep 2014 19:15
URI: http://strathprints.strath.ac.uk/id/eprint/9083

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