Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser

Valentine, G.J. and Kemp, A. and Burns, D. and Balembois, F. and Georges, P. and Bernas, H. and Aron, A. and Aka, G. and Sibbett, W. and Brun, A. (2000) Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser. In: Conference on Lasers and Electro Optics Europe, 2000-09-10 - 2000-09-15, Nice. (Unpublished)

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.

Item type: Conference or Workshop Item (Paper)
ID code: 9066
Notes: AHR
Keywords: ion implanted semiconductor, saturable-absorber mirror, modelocking, femtosecond, low threshold yb, YCOB laser, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 26 Oct 2009 12:37
    Last modified: 17 Jul 2013 15:06
    URI: http://strathprints.strath.ac.uk/id/eprint/9066

    Actions (login required)

    View Item