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Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

Schulz, N. and Rattunde, M. and Manzor, A.C.S. and Kohler, K. and Wagner, J. and Hopkins, J.M. and Burns, D. (2007) Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime. In: Conference on Lasers and Electro-Optics, 2007. CLEO 2007. IEEE, pp. 1-2. ISBN 9781557528346

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Abstract

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35mum optimized for resonant optical in-well pumping around 1.95mum. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.

Item type: Book Section
ID code: 9018
Keywords: semiconductors, gallium compounds, optical pumping, surface emitting lasers, in-well pumping, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 09 Nov 2009 15:31
    Last modified: 08 May 2014 10:12
    URI: http://strathprints.strath.ac.uk/id/eprint/9018

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