Development of high average power picosecond laser systems

Burns, D. and Valentine, G.J. and Bente, E.A.J.M. and Ferguson, A.I.; Kudryashov, Alexis V., ed. (2003) Development of high average power picosecond laser systems. In: Laser resonators and beam control V: Proceedings SPIE 2002. SPIE, p. 129. ISBN 0819443689 (http://dx.doi.org/10.1117/12.469492)

Full text not available in this repository.Request a copy

Abstract

The use of semiconductor saturable absorbers has emerged as an enabling technology in modern passively modelocked laser systems. Their application to high power picosecond lasers, most notably Nd-doped lasers, has produced systems with average power levels of a few tens of watts. In this paper, the development of these laser systems to the 100W level and above will be outlined.