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Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

Sun, H.D. and Dawson, M.D. and Othman, M. and Yong, J.C.L. and Rorison, J.M. and Gilet, P. and Grenouillet, L. and Million, A. (2002) Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation. In: 26th International Conference on the Physics of Semiconductors, 2002-07-29 - 2002-08-02, Edinburgh, UK. (Unpublished)

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Abstract

This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.

Item type: Conference or Workshop Item (Paper)
ID code: 9006
Keywords: nitrogen, electronic structure, gaInNAs, GaAs, multiquantum wells, semiconductors, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
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Depositing user: Strathprints Administrator
Date Deposited: 08 Nov 2009 13:47
Last modified: 17 Jul 2013 15:11
URI: http://strathprints.strath.ac.uk/id/eprint/9006

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