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Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders

Hastie, J.E. and Jeon, C.W. and Hopkins, J.M. and Burns, D. and Dawson, M.D. (2002) Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders. In: International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), 2002-06-22 - 2002-06-28, Moscow, Russia. (Unpublished)

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Abstract

High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.

Item type: Conference or Workshop Item (Paper)
ID code: 9005
Keywords: thermal management, AlGaAs, VECSELs, intracavity sapphire, silicon carbide, heatspreaders, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
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Depositing user: Strathprints Administrator
Date Deposited: 06 Nov 2009 16:35
Last modified: 17 Jul 2013 15:11
URI: http://strathprints.strath.ac.uk/id/eprint/9005

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