Hastie, J.E. and Jeon, C.W. and Hopkins, J.M. and Burns, D. and Dawson, M.D. (2002) Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders. In: International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), 2002-06-22 - 2002-06-28, Moscow, Russia. (Unpublished)
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.
| Item type: | Conference or Workshop Item (Paper) |
|---|---|
| ID code: | 9005 |
| Keywords: | thermal management, AlGaAs, VECSELs, intracavity sapphire, silicon carbide, heatspreaders, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 06 Nov 2009 16:35 |
| Last modified: | 04 Oct 2012 17:12 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/9005 |
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