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In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG

Watson, I.M. and Dawson, M.D. and Deatcher, C.J. and Kim, H.S. and Kim, K.S. and Liu, C. (2001) In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. In: European workshop on metalorganic vapour phase epitaxy, 2001-06-10 - 2001-06-13. (Unpublished)

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Abstract

This paper covers in-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. It was presented at the 2001 European workshop on metalorganic vapour phase epitaxy.