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In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG

Watson, I.M. and Dawson, M.D. and Deatcher, C.J. and Kim, H.S. and Kim, K.S. and Liu, C. (2001) In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. In: European workshop on metalorganic vapour phase epitaxy, 2001-06-10 - 2001-06-13, Wrexham, United Kingdom. (Unpublished)

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Abstract

This paper covers in-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. It was presented at the 2001 European workshop on metalorganic vapour phase epitaxy.

Item type: Conference or Workshop Item (Paper)
ID code: 8998
Keywords: reflectometry, GaN, growth initiation, inGaN, structure growth, ELOG, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 05 Nov 2009 14:44
    Last modified: 17 Jul 2013 15:08
    URI: http://strathprints.strath.ac.uk/id/eprint/8998

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