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Processing of the n-face of GaN: thinning, etching and morphological control

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27, Kyoto, Japan. (Unpublished)

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Abstract

This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

Item type: Conference or Workshop Item (Paper)
ID code: 8983
Keywords: n-face of GaN, morphological control, nitride semiconductors, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Related URLs:
Depositing user: Strathprints Administrator
Date Deposited: 28 Oct 2009 12:39
Last modified: 17 Jul 2013 15:25
URI: http://strathprints.strath.ac.uk/id/eprint/8983

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