Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27, Kyoto, Japan. (Unpublished)
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.
| Item type: | Conference or Workshop Item (Paper) |
|---|---|
| ID code: | 8983 |
| Keywords: | n-face of GaN, morphological control, nitride semiconductors, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 28 Oct 2009 12:39 |
| Last modified: | 04 Oct 2012 17:20 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/8983 |
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