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Processing of the n-face of GaN: thinning, etching and morphological control

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27. (Unpublished)

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Abstract

This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.