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GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

Dawson, M.D. and Calvez, S. and Pessa, M. and Sun, H.D. and Hopkins, J.M. and Smith, S.A. and Clark, A.H. and Macaluso, R. and Jouhti, T. and Gundogdu, K. and Hall, K.C. and Boggess, T.F. (2003) GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. In: ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, 2003-12-07 - 2003-12-12, singapore.

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Abstract

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

Item type: Conference or Workshop Item (Paper)
ID code: 8964
Notes: Also present at http://strathprints.strath.ac.uk/5245/
Keywords: dilute nitrides, semiconducting III–V materials, semiconducting quaternary alloys, solid state lasers, vertical-cavity surface emitting lasers, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Unknown Department
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Depositing user: Strathprints Administrator
Date Deposited: 26 Oct 2009 11:09
Last modified: 17 Jul 2013 15:15
URI: http://strathprints.strath.ac.uk/id/eprint/8964

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