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GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

Dawson, M.D. and Calvez, S. and Pessa, M. and Sun, H.D. and Hopkins, J.M. and Smith, S.A. and Clark, A.H. and Macaluso, R. and Jouhti, T. and Gundogdu, K. and Hall, K.C. and Boggess, T.F. (2003) GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. In: ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, 2003-12-07 - 2003-12-12.

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We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.