Picture of scraped petri dish

Scrape below the surface of Strathprints...

Explore world class Open Access research by researchers at the University of Strathclyde, a leading technological university.

Explore

Mechanisms of AllnN growth by MOVPE: modeling and experimental study

Yakovlev, E.V. and Lobanova, A.V. and Talalaev, R.A. and Watson, I.M. and Lorenz, K. and Alves, E. (2008) Mechanisms of AllnN growth by MOVPE: modeling and experimental study. Physica Status Solidi C, 5 (6). pp. 1688-1690. ISSN 1862-6351

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

Factors affecting the AlInN layer composition have been studied, using both modelling and experimental approaches. The experiments have been performed in a single-wafer Aixtron AIX 200/4 RF-S reactor at setpoint temperatures ranging from 760 to 840 °C, which corresponds to the InN content variation in a wide interval from 13 to about 24%, if other process parameters remain unchanged. The computations fit well the compositional experimental data, and can be used to identify the mechanisms governing the incorporation of the indium atoms into MOVPE grown AlInN layers.