Yakovlev, E.V. and Lobanova, A.V. and Talalaev, R.A. and Watson, I.M. and Lorenz, K. and Alves, E. (2008) Mechanisms of AllnN growth by MOVPE: modeling and experimental study. Physica Status Solidi C, 5 (6). pp. 1688-1690. ISSN 1862-6351
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Factors affecting the AlInN layer composition have been studied, using both modelling and experimental approaches. The experiments have been performed in a single-wafer Aixtron AIX 200/4 RF-S reactor at setpoint temperatures ranging from 760 to 840 °C, which corresponds to the InN content variation in a wide interval from 13 to about 24%, if other process parameters remain unchanged. The computations fit well the compositional experimental data, and can be used to identify the mechanisms governing the incorporation of the indium atoms into MOVPE grown AlInN layers.
| Item type: | Article |
|---|---|
| ID code: | 8123 |
| Keywords: | reactor, film deposition, vapor phase epitaxy, chemical kinetics, computer modeling, computer simulation, metal-organic vapour phase epitaxy, MOVPE, Optics. Light, Physics |
| Subjects: | Science > Physics > Optics. Light Science > Physics |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Miss Sharon Kelly |
| Date Deposited: | 14 Dec 2009 12:26 |
| Last modified: | 04 Oct 2012 12:38 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/8123 |
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