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Mechanisms of AllnN growth by MOVPE: modeling and experimental study

Yakovlev, E.V. and Lobanova, A.V. and Talalaev, R.A. and Watson, I.M. and Lorenz, K. and Alves, E. (2008) Mechanisms of AllnN growth by MOVPE: modeling and experimental study. Physica Status Solidi C, 5 (6). pp. 1688-1690. ISSN 1862-6351

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Abstract

Factors affecting the AlInN layer composition have been studied, using both modelling and experimental approaches. The experiments have been performed in a single-wafer Aixtron AIX 200/4 RF-S reactor at setpoint temperatures ranging from 760 to 840 °C, which corresponds to the InN content variation in a wide interval from 13 to about 24%, if other process parameters remain unchanged. The computations fit well the compositional experimental data, and can be used to identify the mechanisms governing the incorporation of the indium atoms into MOVPE grown AlInN layers.

Item type: Article
ID code: 8123
Keywords: reactor, film deposition, vapor phase epitaxy, chemical kinetics, computer modeling, computer simulation, metal-organic vapour phase epitaxy, MOVPE, Optics. Light, Physics, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Science > Physics
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Miss Sharon Kelly
    Date Deposited: 14 Dec 2009 12:26
    Last modified: 04 Sep 2014 21:24
    URI: http://strathprints.strath.ac.uk/id/eprint/8123

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