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Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

Metzger, N.K. and Leburn, C.G. and Lagatsky, A.A. and Brown, C.T.A. and Calvez, S. and Burns, D. and Sun, H.D. and Dawson, M.D. and Harmand, J.C. and Sibbett, W. (2008) Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM. Optics Express, 16 (23). pp. 18739-18744. ISSN 1094-4087

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The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10μJ/cm2 and a short recovery time of 12ps.