Vetter, S.L. and Hastie, J.E. and Korpijarvi, V.M. and Puustinen, J. and Guina, M. and Okhotnikov, O. and Calvez, S. and Dawson, M.D. (2008) Short Wavelength GaInNAs/GaAs semiconductor disk lasers. Electronics Letters, 44 (18). pp. 1069-1070. ISSN 0013-5194
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1049/el:20081488
Abstract
The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.
| Item type: | Article |
|---|---|
| ID code: | 8118 |
| Keywords: | III-V semiconductors, gallium arsenide, indium compounds, semiconductor laser, semiconductor disk laser, Optics. Light, Physics |
| Subjects: | Science > Physics > Optics. Light Science > Physics |
| Department: | Faculty of Science > Institute of Photonics Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Miss Sharon Kelly |
| Date Deposited: | 14 Dec 2009 11:24 |
| Last modified: | 12 Mar 2012 10:48 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/8118 |
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