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High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0µm

Hopkins, J.M. and Hempler, N. and Rosener, B. and Schulz, N. and Rattunde, M. and Manz, C. and Kohler, K. and Wagner, J. and Burns, David (2008) High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0µm. Optics Letters, 33 (2). pp. 201-203. ISSN 0146-9592

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We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 m. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 m. The beam propagation parameter M2 was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.