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High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0µm

Hopkins, J.M. and Hempler, N. and Rosener, B. and Schulz, N. and Rattunde, M. and Manz, C. and Kohler, K. and Wagner, J. and Burns, David (2008) High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0µm. Optics Letters, 33 (2). pp. 201-203. ISSN 0146-9592

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Abstract

We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 m. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 m. The beam propagation parameter M2 was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.

Item type: Article
ID code: 8110
Notes: Also available in print: http://suprimo.lib.strath.ac.uk/primo_library/libweb/action/display.do?ct=display&doc=SUVOY138015&indx=2&dum=true&scp.scps=scope%3A(SU)&vid=SUVU01&fn=search&dstmp=1261316684710&ct=search&indx=1&cs=frb&fctV=5674187&tab=local&frbg=5674187&fctN=facet_frbrgroupid&vl(freeText0)=optics%20letters&vl(54032236UI0)=lsr02&mode=Basic&dscnt=0&fromLogin=true&srt=rank&vl(69186824UI1)=all_items&doc=SUSFX954925609918
Keywords: semiconductor disc laser, Halbleiterscheibenlase, infrared laser, Infrarot-Laser, GaSb, tunable laser, durchstimmbarer Laser, vertical-external-cavity surface-emitting laser, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Miss Sharon Kelly
    Date Deposited: 11 Jan 2010 12:45
    Last modified: 16 Jul 2013 22:22
    URI: http://strathprints.strath.ac.uk/id/eprint/8110

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