Li, L. and Uttamchandani, D.G. (2006) Monolithic RF MEMS inductor using silicon MEMS foundry process. Micro and Nano Letters, 1 (1). pp. 5-8. ISSN 1750-0443Full text not available in this repository. Request a copy from the Strathclyde author
A successful design of a radio frequency inductor based on a silicon microelectromechanical system foundry process is presented. The suspended inductor has been realised in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is ~1×1 mm. The inductors have been experimentally characterised, and inductances ~2 nH in the frequency range of 200 MHz to 7 GHz have been measured with a self-resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at 4 GHz. After de-embedding, the Q factor reaches 13 at 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.
|Keywords:||silicon, elemental semiconductors, micromechanical devices, inductors, semiconductor device models, monolithic integrated circuits, Electrical engineering. Electronics Nuclear engineering, Biomedical Engineering, Bioengineering, Materials Science(all), Condensed Matter Physics|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||14 Oct 2008|
|Last modified:||27 Mar 2017 00:04|