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Realization of a semiconductor-based cavity soliton laser

Tanguy, Y. and Ackemann, T. and Firth, W.J. and Jäger, R. (2008) Realization of a semiconductor-based cavity soliton laser. Physical Review Letters, 100 (1). 0139071-0139074. ISSN 0031-9007

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Abstract

The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated.

Item type: Article
ID code: 6207
Keywords: laser, cavity laser, soliton cavity laser, semiconductor, solitonic emission states, microlasers, laser beam, optics, physics, Optics. Light, Physics and Astronomy(all)
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Depositing user: Miss Darcy Spiller
Date Deposited: 02 Jun 2008
Last modified: 26 Mar 2015 17:43
URI: http://strathprints.strath.ac.uk/id/eprint/6207

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