Hannah, Stuart and Gleskova, Helena (2014) Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V : comparison with UV-ozone oxidation. In: The 10th International Conference on Organic Electronics, 2014-06-11 - 2014-06-13, San Geminiano Complex.
Hannah_Gleskova_ICOE_2014_organic_thin_film_transistors_operating_at_2_V.pdf - Accepted Author Manuscript
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Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.
|Item type:||Conference or Workshop Item (Poster)|
|Keywords:||roll-to-roll fabrication, thin-film circuits, aluminium oxide, organic thin-film transistors (OTFTs), Electrical engineering. Electronics Nuclear engineering, Manufactures, Electronic, Optical and Magnetic Materials|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering
Technology > Manufactures
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||03 Aug 2016 10:31|
|Last modified:||03 Apr 2017 10:11|