Picture of person typing on laptop with programming code visible on the laptop screen

World class computing and information science research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by researchers from the Department of Computer & Information Sciences involved in mathematically structured programming, similarity and metric search, computer security, software systems, combinatronics and digital health.

The Department also includes the iSchool Research Group, which performs leading research into socio-technical phenomena and topics such as information retrieval and information seeking behaviour.


Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

Gîrgel, Ionut and Edwards, Paul R. and Le Boulbar, Emmanuel and Coulon, Pierre-Marie and Sahonta, Suman-Lata and Allsopp, Duncan W. E. and Martin, Robert W. and Humphreys, Colin J. and Shields, Philip A. (2016) Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes. Journal of Nanophotonics, 10 (1). ISSN 1934-2608

Text (Gîrgel-etal-JON-2016-Investigation-of-indium-gallium-nitride-facet-dependent-nonpolar-growth-rates)
G_rgel_etal_JON_2016_Investigation_of_indium_gallium_nitride_facet_dependent_nonpolar_growth_rates.pdf - Final Published Version
License: Creative Commons Attribution 4.0 logo

Download (2MB) | Preview


Core–shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both {11-20} a-plane and {10-10} m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the {10-10} m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the {10-10} facets of the NRs.