Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

Redondo-Cubero, A and Lorenz, K and Wendler, E and Magalhães, S and Alves, E and Carvalho, D and Ben, T and Morales, F M and García, R and O'Donnell, K P and Wetzel, C (2015) Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing. Nanotechnology, 26 (42). 425703. ISSN 0957-4484 (https://doi.org/10.1088/0957-4484/26/42/425703)

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Abstract

Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N+ implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distributed across the quantum well structure. Despite the extremely high fluences used (up to 4 ×1016 cm-2), the InGaN MQWs exhibit a high stability against ion beam mixing.

ORCID iDs

Redondo-Cubero, A, Lorenz, K, Wendler, E, Magalhães, S, Alves, E, Carvalho, D, Ben, T, Morales, F M, García, R, O'Donnell, K P ORCID logoORCID: https://orcid.org/0000-0003-3072-3675 and Wetzel, C;
  • Item type:Article
    ID code:55103
    Dates:
    Date
    Event
    1 October 2015
    Published
    5 August 2015
    Accepted
    Notes:This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/26/42/425703
    Subjects:Science > Physics > Solid state physics. Nanoscience
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:11 Dec 2015 11:27
    Last modified:11 Nov 2024 11:15
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/55103
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