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High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)

Hopkins, J.M. and Hempler, N. and MacLean, A.J. and Kemp, A. and Dawson, M.D. and Riis, E. and Schulz, N. and Rattunde, M. and Manzor, A.C.S. and Kohler, K. and Wagner, J. and Burns, D. (2007) High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited). In: 8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, 2007-05-14 - 2007-05-16.

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Abstract

In recent years, semiconductor lasers based on the III-V compound semiconductor material system (AlGaIn)(AsSb), emitting in the 1.8 μm to 3.0 μm wavelength regime (in the following abbreviated as 2.Xμm) have reached a considerable level of maturity regarding spectral coverage, output power and device reliability. For the majority of the potential applications of these GaSb-based lasers, output power is not the only criterion, but the combination of high output power and good beam quality, i.e. high brightness, is the ultimate goal.