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1550nm pulsed operation of a GaInNAsSb VCSEL

Laurand, N. and Calvez, S. and Dawson, M.D. and Gupta, J.A. and Aers, G.C. (2006) 1550nm pulsed operation of a GaInNAsSb VCSEL. In: Conference on Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006, 2006-05-21 - 2006-05-26.

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Abstract

Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network (LAN). W A S is the most promising material for this device. We have proposed GalnNAsSb QW that includes small amount of Sb to improve the crystalline quality of GaInNAs by GSmEgmwfJ[~I], and introduced GaNAs barriers [2] to compensate the strain of GaInNAsSb layers.