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Novel 1.3um GaInNAs surface-normal devices

Calvez, S. and Laurand, N. and Smith, S.A. and Clark, A.H. and Hopkins, J.M. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M. (2004) Novel 1.3um GaInNAs surface-normal devices. In: European Materials Research Society 2004 Spring Meeting, 2004-05-24 - 2004-05-28, Strasbourg, France.

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Abstract

The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.

Item type: Conference or Workshop Item (Paper)
ID code: 5349
Keywords: 1.3um GaInNAs, semiconductors, photonics, optics, quantum electronics, applied physics, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Unknown Department
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Depositing user: Strathprints Administrator
Date Deposited: 10 Feb 2008
Last modified: 17 Jul 2013 15:01
URI: http://strathprints.strath.ac.uk/id/eprint/5349

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