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1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. (2003) 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE, pp. 243-246. ISBN 0-7803-7704-4

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We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.