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1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. (2003) 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE Computer Society, pp. 243-246. ISBN 0-7803-7704-4

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Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

Item type: Book Section
ID code: 5346
Keywords: semiconductors, gallium arsenide, indium compounds, optical pumping, surface emitting lasers, optics, lasers, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Unknown Department
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Depositing user: Strathprints Administrator
Date Deposited: 12 Feb 2008
Last modified: 17 Jul 2013 13:04
URI: http://strathprints.strath.ac.uk/id/eprint/5346

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