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Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. (2002) Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures. In: 15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, 2002-11-10 - 2002-11-14, Glasgow, UK.

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Abstract

We report fibre-coupled CW diode pumping of 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 /spl mu/W of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 /spl mu/m signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.

Item type: Conference or Workshop Item (Paper)
ID code: 5342
Keywords: 1.3 micron, 1297.2 nm, 213 muW, GaInNAs wells, GaInNAs-GaAs, GaInNAs-based amplifier technology, GaInNAs/GaAs VCSELs, GaInNAs/GaAs VCSOAs, amplification, design, simplification, fibre-coupled CW diode pumping, laser action, monolithic structures, optical pumping, surface emitting lasers, vertical-cavity semiconductor optical amplifiers, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Unknown Department
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Depositing user: Strathprints Administrator
Date Deposited: 11 Feb 2008
Last modified: 17 Jul 2013 15:00
URI: http://strathprints.strath.ac.uk/id/eprint/5342

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