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InGaN light-emitting diodes of micro-ring geometry

Choi, H.W. and Jeon, C.W. and Dawson, M.D. (2003) InGaN light-emitting diodes of micro-ring geometry. Physica Status Solidi C (7). pp. 2185-2188. ISSN 1862-6351

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Abstract

The fabrication and performance of an InGaN light-emitting diode (LED) array based on a micro-ring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and re-absorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, whilst the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed.

Item type: Article
ID code: 5312
Keywords: light extraction, micro-ring device geometry, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 04 Feb 2008
    Last modified: 16 Jul 2013 19:50
    URI: http://strathprints.strath.ac.uk/id/eprint/5312

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