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Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures

Hetterich, M. and Dawson, M.D. and Egorov, A.Y. and Riechert, H. (2001) Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures. In: 25th International Conference on the Physics of Semiconductors Part I / Part II, 2000-09-17 - 2000-09-22.

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Abstract

We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.