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Performance comparison of GaInNAs vertical cavity semiconductor amplifiers

Laurand, N. and Calvez, S. and Dawson, M.D. and Bryce, A.C. and Jouhti, T. and Kontinnen, J. and Pessa, M. (2005) Performance comparison of GaInNAs vertical cavity semiconductor amplifiers. IEEE Journal of Quantum Electronics, 41 (5). pp. 642-649. ISSN 0018-9197

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Abstract

This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7%. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.

Item type: Article
ID code: 5304
Keywords: GaInNAs quantum wells, surface emitting lasers, vertical cavity amplifiers, Optics. Light, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 03 Feb 2008
    Last modified: 04 Sep 2014 16:47
    URI: http://strathprints.strath.ac.uk/id/eprint/5304

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