Sun, H.D. and Calvez, S. and Dawson, M.D. and Gilet, P. and Grenouillet, L. and Million, A. (2005) Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy. Applied Physics A: Materials Science and Processing, 80 (1). pp. 9-12. ISSN 0947-8396
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.
| Item type: | Article |
|---|---|
| ID code: | 5303 |
| Keywords: | photoluminescence, GaInNAs/GaAs, optical transitions, phase-separated quantum-dot states, molecular beam epitaxy, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 03 Feb 2008 |
| Last modified: | 12 Mar 2012 10:42 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/5303 |
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