Sun, H.D. and Calvez, S. and Dawson, M.D. and Gilet, P. and Grenouillet, L. and Million, A. (2005) Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy. Applied Physics A: Materials Science and Processing, 80 (1). pp. 9-12. ISSN 0947-8396Full text not available in this repository. (Request a copy from the Strathclyde author)
We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.
|Keywords:||photoluminescence, GaInNAs/GaAs, optical transitions, phase-separated quantum-dot states, molecular beam epitaxy, Optics. Light, Materials Science(all), Chemistry(all)|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||03 Feb 2008|
|Last modified:||29 Apr 2016 08:21|