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Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors

Druon, F. and Valentine, G.J. and Chenais, S. and Raybaut, P. and Balembois, F. and Georges, P. and Brun, A. and Birkin, D.J.L. and Sibbett, W. and Mohr, S. and Kopf, D. and Burns, D. and Courjaud, A. and Honninger, C. and Casalin, F. and Gaume, R. and Aron, A. and Aka, G. and Viana, B. and Clerc, C. and Kemp, A. and Bernas, H. (2002) Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors. European Physical Journal: Applied Physics, 20 (3). pp. 177-182. ISSN 1286-0042

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Abstract

Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been obtained. To modelock such lasers, fast saturable absorbers need to be used. Two different types of fast saturable absorbers have been studied: low-temperature-grown semiconductor mirrors ( SESAM) and high-energy-ion-implanted semiconductor Bragg reflectors (SBR). We demonstrated, for the. first time to our knowledge, that ion-implanted SBR can be used to modelock oscillators using Yb-doped materials.