Zhang, H.X. and Gu, E. and Jeon, C.W. and Gong, Z. and Dawson, M.D. and Neil, M.A.A. and French, P.M.W. (2006) Microstripe-array InGaN light-emitting diodes with individually addressable elements. IEEE Photonics Technology Letters, 18 (15). pp. 1681-1683. ISSN 1041-1135Full text not available in this repository. (Request a copy from the Strathclyde author)
High-performance InGaN light-emitting diodes consisting of 120 side-by-side and individually addressable microstripe elements have been successfully fabricated. Each stripe in these devices is 24 pm in width and 3600 mu m long, with a center-to-center spacing between adjacent stripes of 34 mu m. The emission wavelengths demonstrated range from ultraviolet (UV) (370 nm) to blue (470 nm) and green (520 nm). The devices show good uniformity and performance due to finger-pattern n-electrodes running between adjacent stripes. In the case of the UV devices for example, turn-on voltages are around 3.5 V and continuous-wave output powers per stripe similar to 80 mu W at 20 mA. A major feature of these devices is their ability to generate pattern-programmable emission, which offers applications in areas including structured illumination wide-field sectioning optical microscopy.
|Keywords:||inGaN, light-emitting diode (LED), micropixellated light-emitting diode (LED), Optics. Light, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||31 Jan 2008|
|Last modified:||29 Apr 2016 08:32|