Kim, K.S. and Kim, T. and Park, Y.J. and Baek, S.I. and Kim, Y.W. and Sun, H.D. and Dawson, M.D. (2006) Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS. Journal of Crystal Growth, 287 (2). pp. 620-624. ISSN 0022-0248Full text not available in this repository. (Request a copy from the Strathclyde author)
Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.
|Keywords:||photoluminescence, crystals, photonics, Optics. Light, Materials Chemistry, Inorganic Chemistry, Condensed Matter Physics|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||31 Jan 2008|
|Last modified:||29 Apr 2016 08:29|