Jeon, C.W. and Gu, E. and Dawson, M.D. (2005) Mask-free photolithographic exposure using a matrix-addressable micropixellated AllnGaN ultraviolet light-emitting diode. Applied Physics Letters, 86 (221105). ISSN 0003-6951Full text not available in this repository. Request a copy from the Strathclyde author
We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-µm diam, over a distance of more than 500 µm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-µm diam and 30-µm spacing was transferred into an i-line photoresist.
|Keywords:||aluminium compounds, indium compounds, gallium compounds, semiconductors, light emitting diodes, microlenses, optical polymers, etching, photonics, optics, Optics. Light, Physics and Astronomy (miscellaneous)|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Physics > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||31 Jan 2008|
|Last modified:||22 Mar 2017 09:41|