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Mask-free photolithographic exposure using a matrix-addressable micropixellated AllnGaN ultraviolet light-emitting diode

Jeon, C.W. and Gu, E. and Dawson, M.D. (2005) Mask-free photolithographic exposure using a matrix-addressable micropixellated AllnGaN ultraviolet light-emitting diode. Applied Physics Letters, 86 (221105). ISSN 0003-6951

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Abstract

We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-µm diam, over a distance of more than 500 µm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-µm diam and 30-µm spacing was transferred into an i-line photoresist.

Item type: Article
ID code: 5267
Keywords: aluminium compounds, indium compounds, gallium compounds, semiconductors, light emitting diodes, microlenses, optical polymers, etching, photonics, optics, Optics. Light, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 31 Jan 2008
    Last modified: 04 Sep 2014 16:31
    URI: http://strathprints.strath.ac.uk/id/eprint/5267

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