Deatcher, C.J. and Liu, C. and Cheong, M.G. and Smith, L.M. and Rushworth, S. and Widdowson, A. and Watson, I.M. (2004) Silicon doping of gallium nitride using ditertiarybutylsilane. Chemical Vapor Deposition, 10 (4). pp. 187-190. ISSN 0948-1907
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1002/cvde.200304171
Abstract
No abstract
| Item type: | Article |
|---|---|
| ID code: | 5254 |
| Keywords: | gallium nitride, metal-organic vapor phase epitaxy, silanes, silicon doping, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Physics Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 30 Jan 2008 |
| Last modified: | 12 Mar 2012 10:42 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/5254 |
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