Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Silicon doping of gallium nitride using ditertiarybutylsilane

Deatcher, C.J. and Liu, C. and Cheong, M.G. and Smith, L.M. and Rushworth, S. and Widdowson, A. and Watson, I.M. (2004) Silicon doping of gallium nitride using ditertiarybutylsilane. Chemical Vapor Deposition, 10 (4). pp. 187-190. ISSN 0948-1907

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

No abstract

Item type: Article
ID code: 5254
Keywords: gallium nitride, metal-organic vapor phase epitaxy, silanes, silicon doping, Optics. Light, Chemistry(all), Surfaces and Interfaces, Process Chemistry and Technology
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 30 Jan 2008
    Last modified: 04 Sep 2014 16:16
    URI: http://strathprints.strath.ac.uk/id/eprint/5254

    Actions (login required)

    View Item