Jeon, C.W. and Choi, H.W. and Gu, E. and Dawson, M.D. (2004) High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes. IEEE Photonics Technology Letters, 16 (11). pp. 2421-2423. ISSN 1041-1135Full text not available in this repository. (Request a copy from the Strathclyde author)
We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.
|Keywords:||AlInGaN-based light-emitting diodes, high-density light-emitting diodes, i-line UV light source, light-emitting diode fabrication, mask-free exposure, matrix driver circuit, matrix-addressable light-emitting diodes, matrix-addressed format, microarray light-emitting diodes, photolithographic exposure, ultraviolet light-emitting diodes, Optics. Light, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||30 Jan 2008|
|Last modified:||15 Jul 2016 02:10|