High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes
Jeon, C.W. and Choi, H.W. and Gu, E. and Dawson, M.D. (2004) High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes. IEEE Photonics Technology Letters, 16 (11). pp. 2421-2423. ISSN 1041-1135 (http://dx.doi.org/10.1109/LPT.2004.835626)
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We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.
ORCID iDs
Jeon, C.W., Choi, H.W., Gu, E. ORCID: https://orcid.org/0000-0002-7607-9902 and Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989;-
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Item type: Article ID code: 5253 Dates: DateEvent18 October 2004PublishedKeywords: AlInGaN-based light-emitting diodes, high-density light-emitting diodes, i-line UV light source, light-emitting diode fabrication, mask-free exposure, matrix driver circuit, matrix-addressable light-emitting diodes, matrix-addressed format, microarray light-emitting diodes, photolithographic exposure, ultraviolet light-emitting diodes, Optics. Light, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering Subjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics > Institute of Photonics Depositing user: Strathprints Administrator Date deposited: 30 Jan 2008 Last modified: 04 Jan 2024 21:32 URI: https://strathprints.strath.ac.uk/id/eprint/5253