Boyall, N.M. and Durose, K. and Liu, T.Y. and Trampert, A. and Liu, C. and Watson, I.M. (2003) Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors. Institute of Physics Conference Series, 179 (2). pp. 61-66. ISSN 0951-3248
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.
| Item type: | Article |
|---|---|
| ID code: | 5251 |
| Notes: | Paper presented at Electron Microscopy and Analysis Group Conference, Oxford, 2003. |
| Keywords: | semiconductor defect analysis, Optics. Light, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Science > Physics > Optics. Light Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 30 Jan 2008 |
| Last modified: | 12 Mar 2012 10:42 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/5251 |
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