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High resolution 128x96 nitride microdisplay

Choi, H.W. and Jeon, C.W. and Dawson, M.D. (2004) High resolution 128x96 nitride microdisplay. IEEE Electron Device Letters, 25 (5). pp. 277-279. ISSN 0741-3106

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

Matrix-addressable arrays of InGaN micro-light-emitting diodes with 128 /spl times/ 96 pixels and a resolution of 1200 dpi have been fabricated using a novel "sloped sidewall" process. The devices have been fabricated on InGaN blue and green wafers, emitting light at the wavelengths of 468 and 508 nm, respectively. A simple circuit, which enables the display of an arrow pattern with /spl sim/60% of the pixels turned on, was used for device testing. At an injection current of 60 mA, the devices deliver 3.3 (blue) and 2.4 mW (green) of output power, corresponding to a luminance of more than 30 000 Cd/m/sup 2/. These high-brightness and highly versatile devices are certainly an attractive form of emissive micro-display.