Jahn, U. and Dahr, S. and Waltereit, P. and Kostial, H. and Watson, I.M. and Fujiwara, K. (2003) Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures. Institute of Physics Conference Series, 180. pp. 337-340. ISSN 0951-3248
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
The electronic properties of (In,Ga)N/GaN quantum wells depend significantly on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g. for cathodoluminescence (CL). For unintentionally doped structures, we observe an LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p-n structure is changed towards the flat-band conditions during LEEBI, indicating electron-beam-induced passivation of acceptors in the p-type layer.
| Item type: | Article |
|---|---|
| ID code: | 5244 |
| Keywords: | N/GaN quantum wells, irradiation, energy, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 28 Jan 2008 |
| Last modified: | 12 Mar 2012 10:42 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/5244 |
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