Picture of person typing on laptop with programming code visible on the laptop screen

World class computing and information science research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by researchers from the Department of Computer & Information Sciences involved in mathematically structured programming, similarity and metric search, computer security, software systems, combinatronics and digital health.

The Department also includes the iSchool Research Group, which performs leading research into socio-technical phenomena and topics such as information retrieval and information seeking behaviour.

Explore

Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures

Jahn, U. and Dahr, S. and Waltereit, P. and Kostial, H. and Watson, I.M. and Fujiwara, K. (2003) Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures. Institute of Physics Conference Series, 180. pp. 337-340. ISSN 0951-3248

Full text not available in this repository. Request a copy from the Strathclyde author

Abstract

The electronic properties of (In,Ga)N/GaN quantum wells depend significantly on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g. for cathodoluminescence (CL). For unintentionally doped structures, we observe an LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p-n structure is changed towards the flat-band conditions during LEEBI, indicating electron-beam-induced passivation of acceptors in the p-type layer.