Jahn, U. and Dahr, S. and Waltereit, P. and Kostial, H. and Watson, I.M. and Fujiwara, K. (2003) Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures. Institute of Physics Conference Series, 180. pp. 337-340. ISSN 0951-3248Full text not available in this repository. (Request a copy from the Strathclyde author)
The electronic properties of (In,Ga)N/GaN quantum wells depend significantly on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g. for cathodoluminescence (CL). For unintentionally doped structures, we observe an LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p-n structure is changed towards the flat-band conditions during LEEBI, indicating electron-beam-induced passivation of acceptors in the p-type layer.
|Keywords:||N/GaN quantum wells, irradiation, energy, Optics. Light, Physics and Astronomy(all)|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||28 Jan 2008|
|Last modified:||29 Apr 2016 00:30|