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Quantum well intermixing in GaInNAs/GaAs structures

Sun, H.D. and Macaluso, R. and Calvez, S. and Dawson, M.D. and Robert, F. and Bryce, A.C. and Marsh, J.H. and Gilet, P. and Grenouillet, L. and Million, A. and Nam, K.B. and Lin, J.Y. and Jiang, H.X. (2003) Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94 (12). pp. 7581-7585. ISSN 0021-8979

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We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.