Sun, H.D. and Dawson, M.D. and Othman, M. and Yong, J.C.L. and Rorison, J.M. and Gilet, P. and Grenouillet, L. and Million, A. (2003) Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy. Applied Physics Letters, 82 (3). pp. 376-378. ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%-1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells.
|Keywords:||laser-diodes, band offset, nitrogen, alloys, performance, operation, photoluminescence, spectroscopy, quantum wells, Optics. Light, Physics and Astronomy (miscellaneous)|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Physics > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||28 Jan 2008|
|Last modified:||06 Jan 2017 05:14|