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Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

Boyall, N.M. and Durose, K. and Liu, T.Y. and Trampert, A. and Watson, I.M. (2003) Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells. Institute of Physics Conference Series, 180. pp. 289-292. ISSN 0951-3248

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Abstract

A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.

Item type: Article
ID code: 5238
Keywords: optical-properties, luminescence, quantum wells, Optics. Light, Physics and Astronomy(all)
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 28 Jan 2008
    Last modified: 04 Sep 2014 15:19
    URI: http://strathprints.strath.ac.uk/id/eprint/5238

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