Macaluso, R. and Sun, H.D. and Dawson, M.D. and Robert, F. and Bryce, A.C. and Marsh, J.H. and Riechert, H. (2003) Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing. Applied Physics Letters, 82 (24). pp. 4259-4261. ISSN 0003-6951
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.
| Item type: | Article |
|---|---|
| ID code: | 5237 |
| Keywords: | bandgap, GaInNAs, GaAs, quantum well intermixing, Optics. Light, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Science > Physics > Optics. Light Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 25 Jan 2008 |
| Last modified: | 12 Mar 2012 10:42 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/5237 |
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