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Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

Macaluso, R. and Sun, H.D. and Dawson, M.D. and Robert, F. and Bryce, A.C. and Marsh, J.H. and Riechert, H. (2003) Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing. Applied Physics Letters, 82 (24). pp. 4259-4261. ISSN 0003-6951

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Abstract

We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.

Item type: Article
ID code: 5237
Keywords: bandgap, GaInNAs, GaAs, quantum well intermixing, Optics. Light, Electrical engineering. Electronics Nuclear engineering, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Optics. Light
Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 25 Jan 2008
    Last modified: 04 Sep 2014 15:41
    URI: http://strathprints.strath.ac.uk/id/eprint/5237

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