Strathprints logo
Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

DC-gate-bias stressing of a-Si:H TFTs fabricated at 150ºC on polyimide foil

Gleskova, Helena and Wagner, Sigurd (2001) DC-gate-bias stressing of a-Si:H TFTs fabricated at 150ºC on polyimide foil. IEEE Transactions on Electron Devices, 48 (8). pp. 1667-1671. ISSN 0018-9383

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

We investigated the electrical stability of a-Si:H TFTs with mobilities of ∼0.7 cm 2/Vs fabricated on 51 μm thick polyimide foil at 150°C. Positive gate voltage V g ranging from 20 to 80 V was used in the bias stress experiments conducted at room temperature. The bias stressing caused an increase in threshold voltage and subthreshold slope, and minor decrease in mobility. Annealing in forming gas substantially improved the stability of the TFTs. The threshold voltage shift exhibited a power law time dependence with the exponent γ depending on the gate bais V g. For V g = 20 V, γ = 0.45, while for V g = 80 V, γ = 0.27. The threshold voltage shift also exhibited a power law dependence on V g with the exponent β depending slightly on stress duration. β = 2.1 for t = 100 sec and 1.7 for t - 5000 s. These values fall into the range experimentally observed for a-Si:H TFTs fabricated at the standard temperatures of 250-350°C.

Item type: Article
ID code: 5194
Keywords: amorphous semiconductors, elemental semiconductors, hydrogen plasma, thin film transistors, electrical engineering, Electrical engineering. Electronics Nuclear engineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
Depositing user: Strathprints Administrator
Date Deposited: 18 Jan 2008
Last modified: 06 May 2014 16:41
URI: http://strathprints.strath.ac.uk/id/eprint/5194

Actions (login required)

View Item