Picture of smart phone in human hand

World leading smartphone and mobile technology research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by Strathclyde researchers from the Department of Computer & Information Sciences involved in researching exciting new applications for mobile and smartphone technology. But the transformative application of mobile technologies is also the focus of research within disciplines as diverse as Electronic & Electrical Engineering, Marketing, Human Resource Management and Biomedical Enginering, among others.

Explore Strathclyde's Open Access research on smartphone technology now...

Effects of rise time of voltage impulses on oxygen-fed dielectric barrier discharge

Huang, G. M. and Wang, T. and Timoshkin, I. V. and MacGregor, S. J. and Given, M. J. and Wilson, M. P. (2014) Effects of rise time of voltage impulses on oxygen-fed dielectric barrier discharge. In: Proceedings of the 20th International Conference on Gas Discharges and their Applications. UNSPECIFIED, pp. 287-290.

Full text not available in this repository. (Request a copy from the Strathclyde author)


Dielectric barrier discharges (DBD) energised by voltage impulses with the rise rate of 300 V/ns and 500 V/ns have been investigated in the present work. A planar DBD reactor with a 0.5 mm gap distance was designed and developed. Experiment was carried out in oxygen at 0.02 bar gauge and ambient temperature of 20. The reduced electric field (E/N) in the discharge gap under impulse voltages with the two different rise rates was measured. A photomultiplier (PMT) was employed to detect the emitted light when discharges took place. The total current through the reactor was measured and the impulsive discharge current inside the discharge gap was calculated with the help of a onedimensional DBD electrical model. The charge transferred through the gap during the discharge under both rise rates was also calculated. Results show that impulse voltages with the rise rate of 500 V/ns can provide E/N of 683 Td in the discharge gap, and 546 Td can be achieved with the rise rate of 300 V/ns. The charge transferred under the rise rate of 500 V/ns was ~213 nC, 2.1 times higher than the ~101 nC transferred with the rise rate of 300 V/ns.