Bryant, A.T. and Wang, Y. and Finney, S.J. and Lim, T.C. and Palmer, P.R. (2007) Numerical optimization of an active voltage controller for high-power IGBT converters. IEEE Transactions on Power Electronics, 22 (2). pp. 374-383. ISSN 0885-8993Full text not available in this repository. (Request a copy from the Strathclyde author)
Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to regulate the device switching trajectory. This facilitates series connection of devices without the use of external snubber networks. Control must be achieved across the full active region of the IGBT and must balance a number of conflicting system goals including diode recovery. To date, the choice of control parameters has been a largely empirical process. This paper uses accurate device models and formalized optimization procedures to evaluate IGBT active voltage controllers. A detailed optimization for the control of IGBT turn-on is presented in this paper.
|Keywords:||active voltage control (AVC), optimization, power semiconductor device modeling, series insulated gate bipolar transistors (IGBTs), Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||14 Jan 2008|
|Last modified:||22 Mar 2017 09:50|