Picture of smart phone in human hand

World leading smartphone and mobile technology research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by Strathclyde researchers from the Department of Computer & Information Sciences involved in researching exciting new applications for mobile and smartphone technology. But the transformative application of mobile technologies is also the focus of research within disciplines as diverse as Electronic & Electrical Engineering, Marketing, Human Resource Management and Biomedical Enginering, among others.

Explore Strathclyde's Open Access research on smartphone technology now...

Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer

Bejtka, K. and Martin, R.W. and Watson, I.M. and Ndiaye, S. and Leroux, M. (2006) Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer. Applied Physics Letters, 89 (191912). pp. 191912-1. ISSN 0003-6951

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

The effects of lattice-matched (Al,In)N insertion layers on the optical and structural properties of GaN films grown epitaxially on freestanding GaN substrates are described. The intensities and energetic positions of the GaN excitonic transitions in the photoluminescence from material grown above (Al,In)N show that high material quality and low strain have been preserved. The free exciton energies of the overgrown GaN, measured by reflectivity and photoluminescence, are 3.477, 3.482, and 3.500 eV for A, B, and C excitons, respectively, corresponding to strain-free GaN. The spectra are compared with those of a similar heterostructure grown on sapphire and of GaN-on-sapphire templates.