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Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer

Bejtka, K. and Martin, R.W. and Watson, I.M. and Ndiaye, S. and Leroux, M. (2006) Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer. Applied Physics Letters, 89 (191912). pp. 191912-1. ISSN 0003-6951

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Abstract

The effects of lattice-matched (Al,In)N insertion layers on the optical and structural properties of GaN films grown epitaxially on freestanding GaN substrates are described. The intensities and energetic positions of the GaN excitonic transitions in the photoluminescence from material grown above (Al,In)N show that high material quality and low strain have been preserved. The free exciton energies of the overgrown GaN, measured by reflectivity and photoluminescence, are 3.477, 3.482, and 3.500 eV for A, B, and C excitons, respectively, corresponding to strain-free GaN. The spectra are compared with those of a similar heterostructure grown on sapphire and of GaN-on-sapphire templates.

Item type: Article
ID code: 5097
Keywords: growth characterisation, optical characterisation, structural characterization, GaN, GaN substrates, photonics, nanoscience, Solid state physics. Nanoscience, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 08 Jan 2008
    Last modified: 04 Sep 2014 17:30
    URI: http://strathprints.strath.ac.uk/id/eprint/5097

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